Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers-Reference-Cited by-同舟云学术

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

Published:2017-11-28 Issue:49 Volume:9 Page:43336-43342
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Ju Hyun¹,Jeon Dong Su¹,Kim Tae Geun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b10266

Reference32 articles.

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4. An all-solution-processed tactile memory flexible device integrated with a NiO ReRAM

5. Resistive Switching Properties and Failure Behaviors of (Pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

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