Single step wet-chemical deposition of cesium doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e202" altimg="si2.svg"><mml:mi>β</mml:mi></mml:math>-Ga2O3 nanostructured films for memristor application-Reference-Cited by-同舟云学术

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Single step wet-chemical deposition of cesium doped β-Ga2O3 nanostructured films for memristor application

Published:2022-10 Issue: Volume:2 Page:100015
ISSN:2773-0646
Container-title:Memories - Materials, Devices, Circuits and Systems
language:en
Short-container-title:Memories - Materials, Devices, Circuits and Systems

Author:

Suman Siddhartha,Mukurala Nagaraju,Mohapatra Lokanath,Kushwaha Ajay Kumar^ORCID

Publisher

Elsevier BV

Reference49 articles.

1. Overview of candidate device technologies for storage-class memory;Burr;IBM J. Res. Dev.,2008

2. Topical review nanoscale memory devices;Chung;Nanotechnology,2010

3. Memristive devices for computing;Yang;Nat. Nanotechnol.,2013

4. The future of microprocessors;Borkar;Commun. ACM.,2011

5. Development of gallium oxide power devices;Higashiwaki;Phys. Status Solidi Appl. Mater. Sci.,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method;Physica Scripta;2024-03-01

2. Synthesis, phase conversion and physical characteristics of mesoporous β-Ga2O3 nanostructures for catalytic applications;Ceramics International;2024-02

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