Flexible Nanoporous WO3–x Nonvolatile Memory Device-Reference-Cited by-同舟云学术

Flexible Nanoporous WO3–x Nonvolatile Memory Device

Published:2016-08-09 Issue:8 Volume:10 Page:7598-7603
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ji Yongsung,Yang Yang,Lee Seoung-Ki,Ruan Gedeng,Kim Tae-Wook¹,Fei Huilong,Lee Seung-Hoon²,Kim Dong-Yu²,Yoon Jongwon,Tour James M.

Affiliation:

1. Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 565-905, Republic of Korea

2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b02711

Reference44 articles.

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3. Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

4. Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

5. CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

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