Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors-Reference-Cited by-同舟云学术

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Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors

Published:2024-03-05 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Bukke Ravindra Naik¹,Shukla Aman¹,Anil C. A.²,Pujar Pavan³^ORCID

Affiliation:

1. School of Mechanical & Materials Engineering, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175075, India

2. Department of Materials Science, Central University of Tamil Nadu, Thiruvarur, 610005, India

3. Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01845

Reference46 articles.

1. A history of the invention of the transistor and where it will lead us

2. Design of ion-implanted MOSFET's with very small physical dimensions

3. The development of flexible integrated circuits based on thin-film transistors

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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1. Low-Cost, High-Efficiency Aluminum Zinc Oxide Synaptic Transistors: Blue LED Stimulation for Enhanced Neuromorphic Computing Applications;Biomimetics;2024-09-11

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