Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study-Reference-Cited by-同舟云学术

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Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

Published:2020-06-04 Issue:7 Volume:20 Page:4358-4365
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ohka Takumi¹,Akiyama Toru¹^ORCID,Pradipto Abdul Muizz¹,Nakamura Kohji¹,Ito Tomonori¹

Affiliation:

1. Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Research Institute for Applied Mechanics, Kyushu University

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c00117

Reference40 articles.

1. Step bunching on the vicinal GaN(0001) surface

2. Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

3. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

4. Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

5. From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

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1. Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal–Organic Vapor-Phase Epitaxy Condition: A First-Principles Study;Crystal Growth & Design;2024-07-02

2. Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN;Nanomaterials;2024-04-25

3. An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces;physica status solidi (b);2024-04-07

4. Ab initio study for adsorption behavior on AlN(0001) surface with steps and kinks during metal-organic vapor-phase epitaxy;Japanese Journal of Applied Physics;2024-01-29

5. High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates;AIP Advances;2023-04-01

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