High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates-Reference-Cited by-同舟云学术

High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates

Published:2023-04-01 Issue:4 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Kirilenko Pavel¹^ORCID,Najmi Mohammed A.¹^ORCID,Ma Bei²^ORCID,Shushanian Artem³^ORCID,Velazquez-Rizo Martin¹^ORCID,Iida Daisuke¹^ORCID,Ohkawa Kazuhiro¹^ORCID

Affiliation:

1. Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900, Saudi Arabia

2. Graduate School of Electrical and Electronic Engineering, Chiba University 2 , 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan

3. Chemistry Program, Computer, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST) 3 , Thuwal 23955-6900, Saudi Arabia

Abstract

We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10–1–2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm−2 in the case of screw-type and edge-type dislocations, respectively.

Funder

King Abdullah University of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0136205/16819262/045011_1_5.0136205.pdf

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