Impact of surface recombination on efficiency of III-nitride light-emitting diodes
Author:
Affiliation:
1. STR Group - Soft-Impact, Ltd.; P.O. Box 83, 27 Engels av 194156 St. Petersburg Russia
Funder
European Union FP7, NEWLED project
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes
2. Study of surface recombination in GaAs and InP by picosecond optical techniques
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4. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
5. Green GaInN photonic-crystal light-emitting diodes with small surface recombination effect
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