Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3369434
Reference39 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. InGaN Single-Quantum-Well LEDs
3. III–Nitride UV Devices
4. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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