Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth
Author:
Funder
EU-project ITN Rainbow
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference50 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes;Lester;Appl. Phys. Lett.,1995
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates;Nakamura;Appl. Phys. Lett.,1998
3. Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers;Sarzynski;Cryst. Res. Technol.,2012
4. Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells;Lermer;Phys. Status Solidi A,2011
5. The growth of crystals and the equilibrium structures of their surfaces;Burton;Philos. Trans. R. Soc. Lond. Ser. A,1951
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