Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio-Reference-Cited by-同舟云学术

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Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio

Published:2024-07 Issue: Volume:660 Page:159966
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chou Ta-Shun^ORCID,Akhtar Arub^ORCID,Bin Anooz Saud,Rehm Jana^ORCID,Ernst Owen^ORCID,Seyidov Palvan,Fiedler Andreas,Miller Wolfram^ORCID,Galazka Zbigniew,Remmele Thilo^ORCID,Albrecht Martin,Popp Andreas

Funder

European Regional Development Fund

DFG

Leibniz ScienceCampus EEGA

European Commission

BMBF Bonn

Publisher

Elsevier BV

Reference47 articles.

1. Guest editorial: the dawn of gallium oxide microelectronics;Higashiwaki;Appl. Phys. Lett.,2018

2. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

3. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the czochralski method;Galazka;Appl. Phys. Lett.,2022

4. Growth of bulk β-Ga2O3 single crystals by the czochralski method;Galazka;J. Appl. Phys.,2022

5. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth;Kuramata;Jpn. J. Appl. Phys.,2016

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

2. Out-diffusion and uphill-diffusion of Mg in Czochralski-grown (100) β-Ga2O3 under high-temperature annealing and its influence on lateral MOSFET devices;2024-05-06

3. Assessment of the β-Ga2O3 substrate orientation for µm-level-thick layers via MOVPE process;2024-05-02

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