Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201100491/fullpdf
Reference18 articles.
1. Sapphire substrate misorientation effects on GaN nucleation layer properties
2. Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates
3. Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition
4. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
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