Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal–Organic Vapor-Phase Epitaxy Condition: A First-Principles Study-Reference-Cited by-同舟云学术

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Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal–Organic Vapor-Phase Epitaxy Condition: A First-Principles Study

Published:2024-07-02 Issue:14 Volume:24 Page:5906-5915
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Akiyama Toru¹²^ORCID,Kawamura Takahiro¹²

Affiliation:

1. Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

2. Innovation Center for Semiconductor and Digital Future, Mie University, Tsu 514-8507, Japan

Funder

Strategic International Collaborative Research Program

Research Institute for Applied Mechanics, Kyushu University

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00121

Reference44 articles.

1. Dislocation mediated surface morphology of GaN

2. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

3. Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy

4. From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

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