Step bunching on the vicinal GaN(0001) surface-Reference-Cited by-同舟云学术

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Step bunching on the vicinal GaN(0001) surface

Published:2000-10-15 Issue:16 Volume:62 Page:R10661-R10664
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ramana Murty M. V.,Fini P.,Stephenson G. B.,Thompson Carol,Eastman J. A.,Munkholm A.,Auciello O.,Jothilingam R.,DenBaars S. P.,Speck J. S.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.R10661/fulltext

Reference24 articles.

1. Growth model for GaN with comparison to structural, optical, and electrical properties

2. Observation of growth modes during metal-organic chemical vapor deposition of GaN

3. MOVPE growth of GaN on a misoriented sapphire substrate

4. The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

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3. Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient;Applied Physics Express;2021-11-26

4. In situ microbeam surface X-ray scattering reveals alternating step kinetics during crystal growth;Nature Communications;2021-03-19

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