MOVPE growth of GaN on a misoriented sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Akasaki,1987
2. Zn related electroluminescent properties in MOVPE grown GaN
3. Growth of AlGaAs and GaAs by atmospheric-pressure MOCVD on lenticular substrates
4. Critical misorientation morphology in AlGaAs and GaAs grown by atmospheric-pressure MOCVD on misoriented substrates
5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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