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New Mechanism for Oxidation of Native Silicon Oxide

Published:2013-05-06 Issue:19 Volume:117 Page:9819-9825
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Khalilov U.¹,Pourtois G.¹²,Huygh S.¹,van Duin A. C. T.³,Neyts E. C.¹,Bogaerts A.¹

Affiliation:

1. PLASMANT Research Group, Department of Chemistry, University of Antwerp, Universiteitsplein 1, 2610 Antwerp, Belgium

2. IMEC, Kapeldreef 75, 3001 Leuven, Belgium

3. Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp400433u

Reference37 articles.

1. The end of the road for silicon?

2. Observation of interfacial atomic steps during silicon oxidation

3. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

4. Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen

5. Growth of native oxide on a silicon surface

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1. Development and Characterization of N₂O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells;ACS Applied Materials & Interfaces;2024-08-30

2. Anisotropic Effects in Local Anodic Oxidation Nanolithography on Silicon Surfaces: Insights from ReaxFF Molecular Dynamics;Langmuir;2024-07-15

3. Perfect absorption of violet light enabled by rotated Mie resonators;Journal of Applied Physics;2024-06-27

4. Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells;Energies;2023-09-30

5. Native Silicon Oxide Properties Determined by Doping;Langmuir;2023-08-23

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