Development and Characterization of N<sub>2</sub>O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells-Reference-Cited by-同舟云学术

Development and Characterization of N₂O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells

Published:2024-08-30 Issue:36 Volume:16 Page:47931-47943
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Libraro Sofia¹,Bannenberg Lars J.²^ORCID,Famprikis Theodosios²^ORCID,Reyes David³,Hurni Julien¹,Genc Ezgi¹,Ballif Christophe¹⁴,Hessler-Wyser Aïcha¹,Haug Franz-Josef¹,Morisset Audrey¹⁴^ORCID

Affiliation:

1. Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IEM), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Maladière 71b, 2000 Neuchâtel, Switzerland

2. Department of Radiation Science and Technology, Faculty of Applied Sciences, Delft University of Technology, 2629JB Delft, The Netherlands

3. Interdisciplinary Centre for Electron Microscopy, EPFL, 1015 Lausanne, Switzerland

4. CSEM Sustainable Energy Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Horizon 2020 Framework Programme

HORIZON EUROPE Climate, Energy and Mobility

Swiss Federal Office for Energie (OFEN)

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c10612

Reference44 articles.

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5. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions