Native Silicon Oxide Properties Determined by Doping-Reference-Cited by-同舟云学术

Native Silicon Oxide Properties Determined by Doping

Published:2023-08-23 Issue:35 Volume:39 Page:12430-12451
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Della Ciana Michele¹,Kovtun Alessandro²^ORCID,Summonte Caterina³,Candini Andrea²^ORCID,Cavalcoli Daniela⁴^ORCID,Gentili Denis¹^ORCID,Nipoti Roberta³,Albonetti Cristiano¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), via P. Gobetti 101, 40129 Bologna, Italy

2. Consiglio Nazionale delle Ricerche - Istituto per la Sintesi Organica e la Fotoreattività (CNR-ISOF), via P. Gobetti 101, 40129 Bologna, Italy

3. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), via P. Gobetti 101, 40129 Bologna, Italy

4. Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy

Funder

European Commission

FP7 Cooperation

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.3c01652

Reference223 articles.

1. Alkyl Monolayer Passivated Metal-Semiconductor Diodes: 2: Comparison with Native Silicon Oxide

2. The effect of native oxide on thin gate oxide integrity

3. Overview and Evolution of Silicon Wafer Cleaning Technology ∗

4. Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth behavior of cristobalite SiO2 coating on 4H–SiC surface via high-temperature oxidation;Ceramics International;2024-09

2. Wetting Properties of Black Silicon Layers Fabricated by Different Techniques;physica status solidi (RRL) – Rapid Research Letters;2024-04-22