Wetting Properties of Black Silicon Layers Fabricated by Different Techniques

Author:

Ayvazyan Gagik1ORCID,Hakhoyan Levon1,Vardanyan Arman1,Savin Hele2ORCID,Liu Xiaolong2ORCID

Affiliation:

1. Optoelectronic Devices Laboratory National Polytechnic University of Armenia 105, Teryan Yerevan 0009 Armenia

2. Department of Electronics and Nanoengineering Aalto University 02150 Espoo Finland

Abstract

The wettability of black silicon (BSi) layers fabricated by reactive ion etching (RIE), metal‐assisted chemical etching (MACE), and laser‐induced etching (LIE) techniques is studied. The contact angles of wetting on the samples with deionized water and methylammonium iodide‐based perovskite solutions are determined. It is found that the element composition and the enlargement area factor of BSi layers have a significant effect on their wettability. When tested with water, the RIE and MACE BSi layers exhibit hydrophobic properties, while the LIE BSi layer demonstrates hydrophilic properties due to the SiOx‐rich surface structures. It is also shown that aging leads to a decrease in the water contact angle. Upon exposure to perovskite solution droplets, BSi layers become highly lyophilic. Based on the Wenzel and Cassie–Baxter models, the mechanisms responsible for the wetting states of the fabricated samples are identified. In the results obtained, valuable insights are provided into the potential of using these layers in tandem perovskite/silicon solar cells.

Funder

State Committee of Science

Business Finland

Publisher

Wiley

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