Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Ministry of Science and Technology of the People's Republic of China
Special Project for Research and Development in Key Areas of Guangdong Province
Reference38 articles.
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2. High temperature reliability and performance evaluation of 1200 V SiC MOSFETs;Wang;J. Cryst. Growth,2023
3. Effect of hydrogen on the unintentional doping of 4H silicon carbide;Huang;J. Appl. Phys.,2022
4. Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs;Chen;Appl. Phys. Lett.,2023
5. A review of SiC IGBT: Models, fabrications, characteristics, and applications;Han;IEEE Trans. Power Electron.,2021