Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter-Reference-Cited by-同舟云学术

Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter

Published:2017-10-16 Issue:42 Volume:9 Page:36962-36970
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Goh Youngin¹,Ahn Jaehan²,Lee Jeong Rak³,Park Wan Woo³,Ko Park Sang-Hee²,Jeon Sanghun¹^ORCID

Affiliation:

1. Department of Applied Physics, Korea University, 2511, Sejongro, Sejong, 339-700, Republic of Korea

2. Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehakro, Yuseong-gu, Daejeon, 305-701, Republic of Korea

3. Advanced Vacuum and Clean Equipment Optimizer (AVACO), Woelam-dong, Dalseo-gu, Daegu, 1107, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b08065

Reference36 articles.

1. Transparent Electronics

2. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

3. Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

4. Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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