Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects-Reference-Cited by-同舟云学术

Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Author:

Jeon Sanghun¹²,Song Ihun³,Lee Sungsik⁴,Ryu Byungki⁵,Ahn Seung-Eon³,Lee Eunha³,Kim Young³,Nathan Arokia⁴,Robertson John⁴,Chung U-In³

Affiliation:

1. Department of Display and Semiconductor Physics; Korea University; 2511 Sejongro Sejong 339-700 Korea

2. Department of Applied Physics; Korea University; 2511 Sejongro Sejong 339-700 Korea

3. Samsung Advanced Institute of Technology; Samsung Electronics Corporations; Yongin-Si Gyeonggi-Do 446-712 Korea

4. Centre for Advanced Photonics and Electronics; Department of Engineering; Cambridge University; Cambridge CB3 0FA UK

5. Korea Electrotechnology Research Institute; 12, Bulmosan-ro 10 beon-gil Seongsan-gu, Changwon-si Gyeongsangnam-do 642-120 Korea

Funder

Korea government(MEST)

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference46 articles.

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