Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors-Reference-Cited by-同舟云学术

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Published:2022-03-27 Issue:14 Volume:9 Page:2102584
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Chen Zhiying¹,Zhang Meng¹^ORCID,Deng Sunbin²,Jiang Zhendong¹,Yan Yan¹,Han Suting³,Zhou Ye⁴,Wong Man²,Kwok Hoi‐Sing²

Affiliation:

1. College of Electronic and Information Engineering Shenzhen University Shenzhen 518060 P. R. China

2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Hong Kong SAR 999077 P. R. China

3. Institute of Microscale Optoelectronics (IMO) Shenzhen University Shenzhen 518060 P. R. China

4. Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202102584

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4. Fully Integrated Indium Gallium Zinc Oxide NO2 Gas Detector

5. Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions

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