P‐1.11: High‐mobility ZnO thin‐film transistors with HfO 2 /Al 2 O 3 bilayer dielectric
Author:
Affiliation:
1. Institute of Microelectronics Peking University Beijing China
2. School of Information & Communication Engineering Beijing Information Science & Technology University Beijing China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16037
Reference16 articles.
1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping;Kamiya T.;J. Display Technol.,2009
2. Oxide Semiconductor Thin-film transistors: A Review of Recent Advances;Fortunato E.;Adv. Mater.,2012
3. Review of Recent Developments in Amorphous Oxide Semiconductor Thin-film Transistor Devices;Park J.S.;Thin Solid Films,2012
4. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices;Shi J.;Adv. Mater.,2021
5. Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter;Goh Y.;ACS Appl. Mater. Interfaces,2017
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