Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays-Reference-Cited by-同舟云学术

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Published:2012-02-26 Issue:4 Volume:11 Page:301-305
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Jeon Sanghun,Ahn Seung-Eon,Song Ihun,Kim Chang Jung,Chung U-In,Lee Eunha,Yoo Inkyung,Nathan Arokia,Lee Sungsik,Ghaffarzadeh Khashayar,Robertson John,Kim Kinam

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat3256.pdf

Reference31 articles.

1. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).

2. Fortunato, E., Pereira, L. & Barquinha, P. Oxide semiconductors: Order within the order. Phil. Mag. 89, 2741–2758 (2009).

3. Robertson, J. Disorder, band offsets and dopability of transparent conducting oxides. Thin Solid Films 516, 1419–1425 (2008).

4. Hoffman, R. L., Norris, B. J. & Wager, J. F. ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82, 733–735 (2003).

5. Lany, S. & Zunger, A. Anion vacancies as a source of persistent photoconductivity in II–VI and chalcopyrite semiconductors. Phys. Rev. B 72, 035215 (2005).

Cited by 441 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors;Applied Surface Science;2024-12

2. Bio‐Plausible Multimodal Learning with Emerging Neuromorphic Devices;Advanced Science;2024-09-11

3. Emerging Optoelectronic Devices for Brain‐Inspired Computing;Advanced Electronic Materials;2024-09-09

4. Event‐Driven Neuroplasticity and Spiking Modulation in a Photoelectric Neuristor Configured by Threshold Switching Memristor and Optoelectronic Transistor;Advanced Functional Materials;2024-09-05

5. Defect-engineering-based titanium dioxide nanowires for artificial optoelectronic synapses;Journal of Alloys and Compounds Communications;2024-09