Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers-Reference-Cited by-同舟云学术

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Published:2016-03-01 Issue:3 Volume:5 Page:391-395
ISSN:2161-1653
Container-title:ACS Macro Letters
language:en
Short-container-title:ACS Macro Lett.

Author:

Maher Michael J.,Mori Kazunori,Sirard Stephen M.¹,Dinhobl Andrew M.,Bates Christopher M.²,Gurer Emir³,Blachut Gregory,Lane Austin P.,Durand William J.,Carlson Matthew C.,Strahan Jeffrey R.,Ellison Christopher J.,Willson C. Grant

Affiliation:

1. Lam Research Corporation, 12345 North Lamar #150, Austin, Texas 78753, United States

2. Arnold and Mabel Beckman Laboratories for Chemical Synthesis, California Institute of Technology, Pasadena, California 91125, United States

3. Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538, United States

Funder

Welch Foundation

Division of Graduate Education

Division of Engineering Education and Centers

Division of Electrical, Communications and Cyber Systems

Office of Science

Lam Research Corporation

Association of Science-Technology Centers

Nissan Chemical Industries, Ltd.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Inorganic Chemistry,Polymers and Plastics,Organic Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmacrolett.6b00005

Reference47 articles.

1. Block Copolymer Lithography

2. Towards an all-track 300 mm process for directed self-assembly

3. Implementation of a chemo-epitaxy flow for directed self-assembly on 300-mm wafer processing equipment

4. Directed Assembly of Block Copolymer Blends into Nonregular Device-Oriented Structures

5. Directed Self-Assembly of Block Copolymers for Nanolithography: Fabrication of Isolated Features and Essential Integrated Circuit Geometries

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