Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films-Reference-Cited by-同舟云学术

Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

Published:2018-10-25 Issue:46 Volume:10 Page:40286-40293
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jung Hanearl¹,Oh Il-Kwon¹,Yoon Chang Mo¹,Park Bo-Eun¹,Lee Sanghun¹,Kwon Ohyung²,Lee Woo Jae³,Kwon Se-Hun³^ORCID,Kim Woo-Hee⁴^ORCID,Kim Hyungjun¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, Republic of Korea

2. Korea Institute of Industrial Technology, Gangwon Regional Division, 137-41, Gwahakdanji-ro, Sacheon-myeon, Gangneung-si, Gangwon-do 25440, Republic of Korea

3. School of Materials Science and Engineering, Pusan National University, 30 Jangjeon-Dong, Geumjeong-Gu, Busan 46241, Republic of Korea

4. Division of Advanced Materials Engineering, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do 54896, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b14244

Reference45 articles.

1. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

2. A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation