Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
2. Department of Chemistry, Chungnam National University, Daejeon 34134, Korea
Funder
Samsung
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Korea Display Research Corporation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b04985
Reference35 articles.
1. Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures
2. An amorphous oxide semiconductor thin-film transistor route to oxide electronics
3. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
4. Zn-In-O based thin-film transistors: Compositional dependence
5. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system
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