Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

Published:2007-06-11 Issue:24 Volume:90 Page:242114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iwasaki Tatsuya,Itagaki Naho,Den Tohru,Kumomi Hideya,Nomura Kenji,Kamiya Toshio,Hosono Hideo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2749177

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

4. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

5. Transparent thin-film transistors with zinc indium oxide channel layer

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