Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone-Reference-Cited by-同舟云学术

Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

Published:2018-01-05 Issue:2 Volume:10 Page:2143-2150
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jung Hanearl¹,Kim Woo-Hee²,Park Bo-Eun¹,Woo Whang Je¹,Oh Il-Kwon¹,Lee Su Jeong³,Kim Yun Cheol³,Myoung Jae-Min³^ORCID,Gatineau Satoko⁴,Dussarrat Christian⁵,Kim Hyungjun¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, Republic of Korea

2. Division of Advanced Materials Engineering, Chonbuk National University, 567 Baekje-daero, deokjin-gu, Jeonju-si, Jeollabuk-do 54896, Republic of Korea

3. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 03722, Republic of Korea

4. Air Liquide Korea Co., LTD. 50 Yonsei-ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea

5. Air Liquide Laboratories, 28 Wadai, Tsukuba, Ibaraki 300-4247, Japan

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14260