Reducing the β-Ga<sub>2</sub>O<sub>3</sub> Epitaxy Temperature to 240 °C via Atomic Layer Plasma Processing-Reference-Cited by-同舟云学术

Reducing the β-Ga₂O₃ Epitaxy Temperature to 240 °C via Atomic Layer Plasma Processing

Published:2022-12-27 Issue:1 Volume:5 Page:335-343
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ilhom Saidjafarzoda¹^ORCID,Mohammad Adnan¹,Grasso John²,Willis Brian G.²,Okyay Ali K.³,Biyikli Necmi¹

Affiliation:

1. Department of Electrical & Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, Connecticut 06269, United States

2. Department of Chemical and Biomolecular Engineering, University of Connecticut, 191 Auditorium Road, Storrs, Connecticut 06269, United States

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

Funder

University of Connecticut

National Science Foundation

Office of the Vice President for Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01353

Reference64 articles.

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4. A review of Ga2O3materials, processing, and devices

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