Funder
National Natural Science Foundation of China
Science and Technology Innovation Plan Of Shanghai Science and Technology Commission
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference83 articles.
1. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018
2. A Survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014
3. I. Vurgaftmana, J.R. Meyer, L.R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys, VOLUME 89 (2001), 10.1063/1.1368156.
4. Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method;Ohba;Jpn. J. Appl. Phys.,2016
5. Synchrotron X-ray topography studies of the evolution of the defect microstructure in physical vapor transport grown 4H-SiC single crystals;Dudley;ECS Trans.,2013
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献