Enhanced Performance of Solution-Processed Amorphous LiYInZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Enhanced Performance of Solution-Processed Amorphous LiYInZnO Thin-Film Transistors

Published:2012-02-14 Issue:3 Volume:4 Page:1456-1461
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Koo Chang Young¹,Song Keunkyu¹,Jung Yangho¹,Yang Wooseok¹,Kim Seung-Hyun²,Jeong Sunho³,Moon Jooho¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul 120-749, Republic of Korea

2. School of Engineering, Brown University, Providence, Rhode Island 02912, United States

3. Device Materials Research Center, Korea Research Institute of Chemical Technology, 19 Sinseongno Yuseong-gu, Daejeon 305-600, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am201701v

Reference23 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

4. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

5. High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

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