Effect of PGMEA Addition on Zinc‐Tin‐Oxide Thin‐Film Transistor Fabricated by Inkjet‐Printing Process-Reference-Cited by-同舟云学术

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Effect of PGMEA Addition on Zinc‐Tin‐Oxide Thin‐Film Transistor Fabricated by Inkjet‐Printing Process

Published:2022-05-12 Issue:10 Volume:24 Page:2200128
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv Eng Mater

Author:

Lee Yong Gu¹,Choi Woon-Seop¹^ORCID

Affiliation:

1. Department of Display Engineering Hoseo University Asan 31499 Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202200128

Reference16 articles.

1. Review paper: Transparent amorphous oxide semiconductor thin film transistor

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

4. Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films;Coatings;2023-11-23

2. Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors;Micromachines;2023-11-18

3. Promising novel transparent conductive F-doped ZnSnO3 thin films for optoelectronic applications;Journal of Materials Science: Materials in Electronics;2023-01

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