Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.200902450/fullpdf
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5. Electrical and Optical Properties of Transparent Conducting Homologous Compounds in the Indium-Gallium-Zinc Oxide System
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