Can We Control the Thickness of Ultrathin Silica Layers by Hyperthermal Silicon Oxidation at Room Temperature?-Reference-Cited by-同舟云学术

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Can We Control the Thickness of Ultrathin Silica Layers by Hyperthermal Silicon Oxidation at Room Temperature?

Published:2011-11-29 Issue:50 Volume:115 Page:24839-24848
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Khalilov U.¹,Neyts E. C.¹,Pourtois G.¹²,van Duin Adri C. T.³

Affiliation:

1. Department of Chemistry, PLASMANT Research Group, University of Antwerp, Universiteitsplein 1, B-2610 Wilrijk-Antwerp, Belgium

2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

3. Department of Mechanical and Nuclear Engineering, Penn State University, University Park, Pennsylvania 16801, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp2082566

Reference53 articles.

1. International Technology Roadmap for Semiconductors 2010, edition (http://www.public.itrs.net/).

2. Photoemission spectroscopic study on influence of O2 translational kinetic energy for Si() initial oxidation

3. Time resolved photoemission spectroscopy on Si()-2×1 surface during oxidation controlled by translational kinetic energy of O2 at room temperature

4. Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

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