Photoemission spectroscopic study on influence of O2 translational kinetic energy for Si() initial oxidation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Stimulated etching of Si(100) by Cl2 molecular beams with hyperthermal translational energies
2. New apparatus with double supersonic molecular beams for epitaxial growth and surface reaction studies
3. High Resolution Photoemission Study of Low-temperature Oxidation on the Si(001) Surface
4. Chemical structure of the ultrathinSiO2/Si(100)interface: An angle-resolved Si2pphotoemission study
5. Oxidation of Si(001)-2×1
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1. Corrigendum to “Photoemission spectroscopic study on influence of O2 translational kinetic energy for Si(001) initial oxidation” [Surf. Sci. 507–510, 797–802 (2002)];Surface Science;2015-07
2. In situ high-resolution X-ray photoelectron spectroscopy – Fundamental insights in surface reactions;Surface Science Reports;2013-11
3. Ultrafast x-ray photoelectron spectroscopy in the microsecond time domain;Review of Scientific Instruments;2013-09
4. On the c-Si|a-SiO2 Interface in Hyperthermal Si Oxidation at Room Temperature;The Journal of Physical Chemistry C;2012-10-05
5. Hyperthermal Oxidation of Si(100)2×1 Surfaces: Effect of Growth Temperature;The Journal of Physical Chemistry C;2012-04-05
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