Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Published:2008 Issue:1 Volume:92 Page:012110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Enta Yoshiharu,Mun Bongjin S.,Rossi Massimiliano,Ross Philip N.,Hussain Zahid,Fadley Charles S.,Lee Ki-Suk,Kim Sang-Koog

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference20 articles.

1. General Relationship for the Thermal Oxidation of Silicon

2. Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

3. Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results

4. Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II . Physical Mechanisms

5. Ultrathin SiO2 on Si II. Issues in quantification of the oxide thickness

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3. Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A;2021-09

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