Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method
Author:
Affiliation:
1. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea
2. Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c00811
Reference39 articles.
1. Silicon-on-insulator 'gate-all-around device'
2. A Comparative Study on Hot-Carrier Injection in 5-Story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs
3. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
4. Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O[sub 2]
5. Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O2
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