Silicon-on-insulator 'gate-all-around device'-Reference-Cited by-同舟云学术

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Silicon-on-insulator 'gate-all-around device'

Published: Issue: Volume: Page:
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Container-title:International Technical Digest on Electron Devices
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Author:

Colinge J.P.,Gao M.H.,Romano-Rodriguez A.,Maes H.,Claeys C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/878/6081/00237128.pdf?arnumber=237128

Cited by 273 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel method to solve analytically the non-linear Poisson equation in the inversion layer of a MOSFET;Semiconductor Science and Technology;2024-08-13

2. Performance Analysis of Gate-All-Around Transistor at Various Technology Nodes;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

3. SiX₂ (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications;Nano Letters;2024-05-09

4. Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K;Solid-State Electronics;2024-05

5. Abnormal Silicon Etching Behaviors in Nanometer-Sized Channels;Nano Letters;2024-04-01

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