Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O[sub 2]-Reference-Cited by-同舟云学术

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Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O[sub 2]

Published:2009 Issue:11 Volume:12 Page:D85
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Eom Tae-Kwang,Sari Windu,Choi Kyu-Jeong,Shin Woong-Chul,Kim Jae Hyun,Lee Do-Joong,Kim Ki-Bum,Sohn Hyunchul,Kim Soo-Hyun

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference23 articles.

1. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

2. Liner materials for direct electrodeposition of Cu

3. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes

4. Applications of atomic layer deposition to nanofabrication and emerging nanodevices

5. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

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4. Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization;IEEE Journal of the Electron Devices Society;2023

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