Author:
Suh You-Seok,Lazar Heather,Chen Bei,Lee Jae-Hoon,Misra Veena
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. See,International Technology Roadmap for Semiconductors, Semiconductor Industry Association; see also http://public.itrs.net/ for most recent updates.
2. Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
3. A.C. Diebold ,Characterization and Metrology for ULSI Technology, AIP Conference Proceedings, p. 42 (2000).
4. Future technology for advanced MOS devices
Cited by
33 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献