Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD-Reference-Cited by-同舟云学术

Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD

Published:2023 Issue:11 Volume:11 Page:3743-3750
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Ji Won¹^ORCID,Jin Hyun Soo¹²,Kim Yoon Jeong¹,Heo Ji Sun¹,Kim Woo-Hee¹^ORCID,Ahn Ji-Hoon¹^ORCID,Park Tae Joo¹^ORCID

Affiliation:

1. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea

2. SK Hynix. Inc., 2091, Gyeongchung-daero, Icheon 17336, Republic of Korea

Abstract

Electric-potential-assisted atomic layer deposition was demonstrated for Ru film growth. Surface reaction was modified via the electric potential, which affected the nucleation and microstructure of films. Assorted film properties were improved notably.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC04755A

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