Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O2-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O2

Published:2012-12-18 Issue:3 Volume:2 Page:P47-P53
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Hong Tae Eun,Choi Sang-Hyeok,Yeo Seungmin,Park Ji-Yoon,Kim Soo-Hyun,Cheon Taehoon,Kim Hoon,Kim Min-Kyu,Kim Hyungjun

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes

2. Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor

3. Liner materials for direct electrodeposition of Cu

4. Applications of atomic layer deposition to nanofabrication and emerging nanodevices

5. Atomic Layer Deposition: An Overview

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1. Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process;Applied Surface Science;2024-10

2. Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films;Chemistry of Materials;2024-08-21

3. Metallic nanofilms on Si(100) and SiO₂ grown with a ruthenium precursor;Japanese Journal of Applied Physics;2024-08-01

4. Area Selective Deposition of Ru on W/SiO₂ Nanopatterns via Sequential Reactant Dosing and Thermal Defect Correction;Chemistry of Materials;2024-06-11

5. Chemical mechanism of oxidative etching of ruthenium: Insights into continuous versus self-limiting conditions;Applied Surface Science;2023-11

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