Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor-Reference-Cited by-同舟云学术

Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor

Published:2008-12-30 Issue:2 Volume:21 Page:207-209
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Han Jeong Hwan¹,Lee Sang Woon¹,Choi Gyu-Jin¹,Lee Sang Young¹,Hwang Cheol Seong¹,Dussarrat Christian¹,Gatineau Julien¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151−744, Korea, and Air Liquide Laboratories, 28 Wadai, Tsukuba-Shi, Ibaraki 300−4247, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm802485r

Reference11 articles.

1. Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)3 and Oxygen

2. Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System

3. Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films

4. Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-π-cyclopentadienyl)Ru for Memory Applications

5. Ruthenium Film with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor

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