Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective-Reference-Cited by-同舟云学术

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Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective

Published:2023-09 Issue: Volume:20 Page:100223
ISSN:2590-0072
Container-title:Micro and Nano Engineering
language:en
Short-container-title:Micro and Nano Engineering

Author:

Thakare Devesh,de Marneffe Jean-François,Delabie Annelies,Philipsen Vicky

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference76 articles.

1. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography;Erdmann;Adv. Opt. Technol.,2017

2. V. Philipsen et al., "Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers," J. Micro. Nanolithogr. MEMS MOEMS 16(4), 041002 doi: https://doi.org/10.1117/1.JMM.16.4.041002.

3. Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?;Erdmann;J. Micro. Nanolithogr. MEMS MOEMS,2018

4. Alternative reticles for low-k1 EUV imaging;van Lare,2019

5. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask;Wu;Micro Nano Eng.,2021

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