Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors-Reference-Cited by-同舟云学术

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Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors

Published:2022-03-01 Issue:3 Volume:4 Page:1343-1350
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jeong Hyun-Jun¹²,Kim Yoon-Seo¹,Jeong Seok-Goo³,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. R&D Center, Samsung Display, 95 Samsung 2-ro, Giheung-gu, Yongin-si 17113, Republic of Korea

3. Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00079

Reference46 articles.

1. Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

2. Electronic phase separation at the LaAlO3/SrTiO3 interface

3. Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications

4. Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures

5. 56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT

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1. Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs;IEEE Transactions on Electron Devices;2024-09

2. Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition;Applied Surface Science;2024-08

3. Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices;Advanced Electronic Materials;2024-07-25

4. Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction;Journal of Vacuum Science & Technology A;2024-06-25

5. 80‐4: Highly Reliable, As‐Grown Crystalline InGaZnO TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of High‐Resolution AMOLED Display;SID Symposium Digest of Technical Papers;2024-06

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