Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O-Reference-Cited by-同舟云学术

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Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Published:2017-10 Issue: Volume:419 Page:758-763
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Agbenyeke Raphael Edem,Jung Eun Ae,Park Bo Keun,Chung Taek-Mo,Kim Chang Gyoun,Han Jeong Hwan

Funder

Korea Research Institute of Chemical Technology

National Research Council of Science & Technology (NST) grant by the Korea government (MSIP)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Computational study on the mechanisms and energetics of trimethylindium reactions with H2O and H2S;Raghunath;J. Phys. Chem. A,2007

2. Ultrathin In2O3 nanowires with diameters below 4 nm: synthesis, reversible wettability switching behavior, and transparent thin-film transistor applications;Shen;ACS Nano,2011

3. Study of quasi-monodisperse In2O3 nanocrystals: synthesis and optical determination;Liu;J. AM. Chem. Soc.,2005

4. Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant;Maeng;Ceram. Int.,2015

5. Synthesis structure, and ethanol gas sensing properties of In2O3 nanorods decorated with Bi2O3 nanoparticles;Park;ACS Appl. Mater. Interfaces,2015

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