Emerging Atomic Layer Deposition Technology toward High‐k Gate Dielectrics, Energy, and Photocatalysis Applications

Author:

Liu Yanfei1,Zhang Huang2,Kang Shifei12ORCID

Affiliation:

1. Institute of Photochemistry and Photofunctional Materials (IPPM) University of Shanghai for Science and Technology Shanghai 200093 China

2. Department of Environmental Science and Engineering University of Shanghai for Science and Technology Shanghai 200093 China

Abstract

The precise design and efficient development of nanoscale materials at the atomic level has enabled high‐end renewable energy storage, conversion devices, and large‐scale environmental governance equipment. Atomic layer deposition (ALD) is a new vapor‐phase technology for precise surface thin‐film preparation, and is outstanding with self‐limiting reactions, large deposition area, adjustable film composition, film uniformity, angstrom thickness control, and low temperature. With these characteristics, ALD plays an important role in many industry and research fields. This review briefly introduces the principle, main technical advantages, and applications of ALD, including high‐k gate dielectrics, solar cells, fuel cells, and photocatalysis. The progress of the ALD technology in preparation and application of photocatalyst is emphatically reviewed, and the large‐scale application of ALD in photocatalytic thin‐film materials is prospected.

Publisher

Wiley

Subject

General Energy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3