Ultrathin In2O3 Nanowires with Diameters below 4 nm: Synthesis, Reversible Wettability Switching Behavior, and Transparent Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Ultrathin In2O3 Nanowires with Diameters below 4 nm: Synthesis, Reversible Wettability Switching Behavior, and Transparent Thin-Film Transistor Applications

Published:2011-07-18 Issue:8 Volume:5 Page:6148-6155
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Shen Guozhen¹,Liang Bo¹,Wang Xianfu¹,Huang Hongtao¹,Chen Di¹,Wang Zhong Lin¹²

Affiliation:

1. Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China,

2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn2014722

Reference50 articles.

1. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

2. Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires

3. Nanobelts of Semiconducting Oxides

4. Large-Scale Synthesis of Six-Nanometer-Wide ZnO Nanobelts

5. Self-Coiling of Ag2V4O11 Nanobelts into Perfect Nanorings and Microloops

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