Affiliation:
1. Advanced Display Research Center and Department of Information Display Kyung Hee University Seoul Korea 130‐701
2. Department of Semiconductor Display Gachon University Seongnam-si Korea 13120
Abstract
We report a low‐cost method for growing highly‐oriented crystalline InGaZnO (C‐IGZO) for a high‐resolution, active‐matrix thin‐film transistor (TFT) backplane for organic light‐emitting diode displays using spray pyrolysis. The self‐aligned, coplanar oxide TFT with an as‐grown C‐IGZO channel layer demonstrates a threshold voltage of‐0.35 V, saturation mobility of 33.99 cm2 V‐1 s‐1 , and subthreshold swing of 0.15 Vdec‐1, with an on/off current ratio exceeding 108 . Moreover, the C‐IGZO TFT with a channel length of 1.16 μm exhibits excellent operational stability under bias temperature stress.